activity
20212024
most citedExtended-SWIR Photodetection in All-Group IV Core/Shell Nanowires

15 citations · 31 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2024★ 5 cited

Transfer-printed multiple GeSn membrane mid-infrared photodetectors

Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +8

Due to their narrow band gap and compatibility with silicon processing, germanium-tin (GeSn) alloys are a versatile platform for scalable integrated mid-infrared photon…

physics.optics2023

Mid-infrared top-gated Ge/GeSn nanowire phototransistors

Lu Luo, Mahmoud RM Atalla, Simone Assali +2

Achieving high crystalline quality GeSn semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-inf…

cond-mat.mes-hall2023

Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires

Lu Luo, Mahmoud RM Atalla, Simone Assali +3

Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, fr…

cond-mat.mes-hall2023★ 11 cited

Nuclear Spin-Depleted, Isotopically Enriched 70Ge/28Si70Ge Quantum Wells

O. Moutanabbir, S. Assali, A. Attiaoui +6

The p-symmetry of the hole wavefunction is associated with a weaker hyperfine interaction as compared to electrons, thus making hole spin qubits attractive candidates to implement…

physics.optics2021★ 15 cited

Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires

Lu Luo, Simone Assali, Mahmoud R. M. Atalla +6

Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we e…