Ge‐Qi Mao

activity

20222024

Hf O_{2}

from a chemical perspective

40 citations · 103 across the 5 of their papers we have counts for

collaborators

Showing 2022 · cond-mat.mtrl-sciShow all

3 papers · 2 filters

cond-mat.mtrl-sci2022★ 37 cited

Designing wake-up free ferroelectric capacitors based on the $Hf O_{2} /Zr O_{2}$ superlattice structure

Na Bai, Kan-Hao Xue, Jinhai Huang +8

The wake-up phenomenon widely exists in hafnia-based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at higher temperatures have been r…

cond-mat.mtrl-sci2022★ 11 cited

Hafnia for analog memristor: Influence of stoichiometry and crystalline structure

Li-Heng Li, Kan-Hao Xue, Jun-Hui Yuan +2

The highly non-linear switching behavior of hafnia memristor actually hinders its wide application in neuromorphic computing. Theoretical understanding into its switching mechanism…

cond-mat.mtrl-sci2022★ 40 cited

Ferroelectricity in $Hf O_{2}$ from a chemical perspective

Jun-Hui Yuan, Ge-Qi Mao, Kan-Hao Xue +7

Ferroelectricity observed in thin film $Hf O_{2}$ , either doped with Si, Al, etc. or in the $H f_{0.5} Z r_{0.5} O_{2}$ form, has gained great technical significance. Howe…

Designing wake-up free ferroelectric capacitors based on the HfO2​/ZrO2​ superlattice structure

Hafnia for analog memristor: Influence of stoichiometry and crystalline structure

Ferroelectricity in HfO2​ from a chemical perspective

Designing wake-up free ferroelectric capacitors based on the $Hf O_{2} /Zr O_{2}$ superlattice structure

Ferroelectricity in $Hf O_{2}$ from a chemical perspective