40 citations · 103 across the 5 of their papers we have counts for
5 papers
Phase transitions in typical fluorite-type ferroelectrics
Heng Yu, Kan-Hao Xue, Nan Feng +4
While ferroelectric hafnia () has become a technically important material for microelectronics, the physical origin of its ferroelectricity remains poorly understoo…
Impact of Zr substitution on the electronic structure of ferroelectric hafnia
Jinhai Huang, Ge-Qi Mao, Kan-Hao Xue +4
-based dielectrics are promising for nanoscale ferroelectric applications, and the most favorable material within the family is Zr-substituted hafnia, i.e., $\mathr…
Designing wake-up free ferroelectric capacitors based on the superlattice structure
Na Bai, Kan-Hao Xue, Jinhai Huang +8
The wake-up phenomenon widely exists in hafnia-based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at higher temperatures have been r…
Hafnia for analog memristor: Influence of stoichiometry and crystalline structure
Li-Heng Li, Kan-Hao Xue, Jun-Hui Yuan +2
The highly non-linear switching behavior of hafnia memristor actually hinders its wide application in neuromorphic computing. Theoretical understanding into its switching mechanism…
Ferroelectricity in from a chemical perspective
Jun-Hui Yuan, Ge-Qi Mao, Kan-Hao Xue +7
Ferroelectricity observed in thin film , either doped with Si, Al, etc. or in the form, has gained great technical significance. Howe…