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cond-mat.mtrl-sci2019
AlSiN, a new Nitride compound
R. Dagher, L. Lymperakis, V. Delaye +4
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350C and 1550$^\cir…
cond-mat.mtrl-sci2003
Gallium adsorption on (0001) GaN surfaces
C. Adelmann, J. Brault, G. Mula +3
We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the fra…