13 citations · 27 across the 3 of their papers we have counts for
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Optimum surface-passivation schemes for near-surface spin defects in silicon carbide
Cyrille Armel Sayou Ngomsi, Tamanna Joshi, Pratibha Dev
Spin-active defects in silicon carbide (SiC) are promising quantum light sources for realizing scalable quantum technologies. In different applications, these photoluminescent defe…
Site-dependent properties of quantum emitters in nanostructured silicon carbide
Tamanna Joshi, Pratibha Dev
Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applica…
Doping-limitations of cubic boron nitride: effects of unintentional defects on shallow doping
Tamanna Joshi, Pankaj Kumar, Bipul Poudyal +3
Cubic boron nitride (cBN) is an ultra-wide bandgap, super-hard material with potential for extreme-temperature and -pressure applications. A proof-of-principle p-n junction using c…