most citedOptimum surface-passivation schemes for near-surface spin defects in silicon carbide

5 citations · 5 across the 1 of their papers we have counts for

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cond-mat.mtrl-sci2024★ 5 cited

Optimum surface-passivation schemes for near-surface spin defects in silicon carbide

Cyrille Armel Sayou Ngomsi, Tamanna Joshi, Pratibha Dev

Spin-active defects in silicon carbide (SiC) are promising quantum light sources for realizing scalable quantum technologies. In different applications, these photoluminescent defe…