Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing

J. C. Kim, J. -Y. Ji, J. S. Kline +2

Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum…