most citedPrecision determination of band offsets in strained InGaAs/GaAs quantum wells by C-V-profiling and Schroedinger-Poisson self-consistent simulation

49 citations · 67 across the 2 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

2 papers · 1 filter

cond-mat.mtrl-sci2020★ 18 cited

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Ivan Gamov, Eberhard Richter, Markus Weyers +10

Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds , the carbon atoms increasingly form triatomic cluster…

cond-mat.mtrl-sci2003★ 49 cited

Precision determination of band offsets in strained InGaAs/GaAs quantum wells by C-V-profiling and Schroedinger-Poisson self-consistent simulation

V. I. Zubkov, M. A. Melnik, A. V. Solomonov +4

The results of measurements and numerical simulation of charge carrier distribution and energy states in strained quantum wells In_xGa_{1-x}As/GaAs (0.06 < x < 0.29) by C-V-profili…