18 citations · 18 across the 1 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2020★ 18 cited
Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects
Ivan Gamov, Eberhard Richter, Markus Weyers +10
Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds , the carbon atoms increasingly form triatomic cluster…
cond-mat.mtrl-sci2003
Precision determination of band offsets in strained InGaAs/GaAs quantum wells by C-V-profiling and Schroedinger-Poisson self-consistent simulation
V. I. Zubkov, M. A. Melnik, A. V. Solomonov +4
The results of measurements and numerical simulation of charge carrier distribution and energy states in strained quantum wells In_xGa_{1-x}As/GaAs (0.06 < x < 0.29) by C-V-profili…