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cond-mat.mtrl-sci2003
Formation and annihilation of nanocavities during keV ion irradiation of Ge
J. C. Kim, David G. Cahill, R. S. Averback
Nanocavities in Ge(111) created by 5 keV Xe ion irradiation are characterized by ex situ transmission electron microscopy and Rutherford backscattering spectrometry. Nanocavities n…
cond-mat.mtrl-sci2003
The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)
J. C. Kim, J. -Y. Ji, J. S. Kline +2
The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scann…
cond-mat.mtrl-sci2003
Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing
J. C. Kim, J. -Y. Ji, J. S. Kline +2
Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum…