activity
19952024
most citedMeasurement and QCD Analysis of the Diffractive Deep-Inelastic Scattering Cross Section at HERA

258 citations · 7.2k across the 171 of their papers we have counts for

collaborators
Showing physics.ins-detShow all

17 papers · 1 filter

physics.ins-det2023

Intel Stratix 10 FPGA design for track reconstruction for the ATLAS experiment at the HL-LHC

A. Camplani, S. Dittmeier, A. Annovi +22

The fast reconstruction of charged particle tracks with high efficiency and track quality is an essential part of the online data selection for the ATLAS experiment at the High-Lum…

physics.ins-det2022★ 6 cited

Upgrading the Beam Telescopes at the DESY II Test Beam Facility

H. Augustin, R. Diener, S. Dittmeier +14

The DESY II Test Beam Facility is a key infrastructure for modern high energy physics detector development, providing particles with a small momentum spread in a range from 1 to 6…

physics.ins-det2020★ 117 cited

Technical design of the phase I Mu3e experiment

K. Arndt, H. Augustin, P. Baesso +102

The Mu3e experiment aims to find or exclude the lepton flavour violating decay at branching fractions above . A first phase of the experiment using an…

physics.ins-det2019★ 16 cited

Performance of the large scale HV-CMOS pixel sensor MuPix8

H. Augustin, N. Berger, C. Blattgerste +26

The Mu3e experiment is searching for the charged lepton flavour violating decay , aiming for an ultimate sensitivity of one in decays. In an…

physics.ins-det2018★ 2 cited

Effects of Proton Irradiation on 60 GHz CMOS Transceiver Chip for Multi-Gbps Communication in High-Energy Physics Experiments

Imran Aziz, Dragos Dancila, Sebastian Dittmeier +18

This paper presents the experimental results of proton irradiation on a low power, half-duplex transceiver (TRX) chip implemented in CMOS technology. It s…

physics.ins-det2017★ 13 cited

Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

H. Augustin, N. Berger, S. Dittmeier +11

High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7…