Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm
arXiv:1712.03921 · doi:10.1016/j.nima.2018.07.044
Abstract
High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. It is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to ) and protons (up to ) and compare the performance with non-irradiated sensors. Efficiencies well above 90 % at noise rates below 200 Hz per pixel are measured. A time resolution better than 22 ns is measured for all tested settings and sensors, even at the highest irradiation fluences. The data transmission at 1.25 Gbit/s and the on-chip PLL remain fully functional.
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Cited by in corpus (5)
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- The P2 Experiment - A future high-precision measurement of the electroweak mixing angle at low momentum transfer
- Performance of the large scale HV-CMOS pixel sensor MuPix8
- MuPix and ATLASPix -- Architectures and Results
- A Triplet Track Trigger for the FCC-hh to improve the measurement of Di-Higgs production and the Higgs self-coupling