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researcher

M. Houssa

6 papers hereh-index 5011.7k citations463 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author4
  • last author2

Across the 6 of 6 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci3
  • cond-mat.mes-hall2
  • cond-mat.str-el1

identity via Semantic Scholar / OpenAlex

activity
20032021
most citedAdvanced DFT-NEGF transport techniques for novel 2D-material and device exploration including HfS2/WSe2 van-der-Waals Heterojunction TFET and WTe2/WS2 metal/semiconductor contact

48 citations · 48 across the 1 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

3 papers · 1 filter

cond-mat.mtrl-sci2021

An efficient direct band-gap transition in germanium by three-dimensional strain

Simon Mellaerts, Valeri Afanasiev, Jin Won Seo +2

Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation st…

cond-mat.mtrl-sci2020

Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van der Waals coupling

Wouter Mortelmans, Karel De Smet, Ruishen Meng +4

Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (…

cond-mat.mtrl-sci2003

Aging process of electrical contacts in granular matter

S. Dorbolo, M. Ausloos, N. Vandewalle +1

The electrical resistance decay of a metallic granular packing has been measured as a function of time. This measurement gives information about the size of the conducting cluster…

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