183 citations · 378 across the 12 of their papers we have counts for
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Advanced DFT-NEGF transport techniques for novel 2D-material and device exploration including HfS2/WSe2 van-der-Waals Heterojunction TFET and WTe2/WS2 metal/semiconductor contact
Aryan Afzalian, Elaheh Akhoundi, Gautam Gaddemane +2
We present, here, advanced DFT-NEGF techniques that we have implemented in our ATOmistic MOdelling Solver, ATOMOS, to explore transport in novel materials and devices and in partic…
Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene
Simon Mellaerts, Ruishen Meng, Mariela Menghini +4
The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electro…
Getting through the nature of silicene: sp2-sp3 two-dimensional silicon nanosheet
E. Cinquanta, E. Scalise, D. Chiappe +5
By combining experimental techniques with ab-initio density functional theory calculations, we describe the Si/Ag(111) two-dimensional system in terms of a sp2-sp3 crystalline form…