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20032013
most citedSpin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves

4 citations · 4 across the 2 of their papers we have counts for

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cond-mat.mtrl-sci2003

Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers

R. Moriya, H. Munekata

The amount of ionized Mn acceptors in various p-type Mn-doped GaAs epilayers has been evaluated by electrochemical capacitance-voltage measurements, and has been compared systemati…