collaborators

12 papers

cond-mat.mes-hall2026

Collective quantum state at the atomic limit

Fan Zhang, Yanxing Li, Chengye Dong +8

Collective quantum states are often associated with extended systems, where spatially extensive degrees of freedom enable emergent many-body behavior; whether such strongly correla…

cond-mat.mes-hall2026

Ultrafast photo-thermoelectric currents in graphene junctions in the mid-infrared

Nina Pettinger, Michel Panhans, Johannes Schmuck +8

Graphene is widely recognized for its ultrafast and broadband photocurrent response, but whether the broadband ultrafast characteristics are preserved at mid-infrared wavelengths w…

cond-mat.mes-hall2026

Ultrafast Band-Gap Renormalization in Bilayer Graphene

Eduard Moos, Zhi-Yuan Deng, Hauke Beyer +6

We demonstrate, by femtosecond time- and angle-resolved photoemission spectroscopy, that photoinduced interlayer charge transfer in a heterostructure consisting of Bernal-stacked b…

cond-mat.mes-hall2026

Point defects and their dynamic behaviors in silver monolayer intercalated between graphene and SiC

Van Dong Pham, Arpit Jain, Chengye Dong +4

Point defects give rise to sharp modifications in the structures and electronic properties of two-dimensional metals, offering an atomic-level platform for fundamental studies and…

cond-mat.mtrl-sci2025

Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface

Arpit Jain, Boyang Zheng, Sawani Datta +23

Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural con…

cond-mat.mtrl-sci2025

Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices

Furkan Turker, Bohan Xu, Chengye Dong +15

High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and…