26 citations · 68 across the 9 of their papers we have counts for
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cond-mat.mtrl-sci2021★ 6 cited
Optimization of the multi-mem response of topotactic redox LaSrMnCoO
W. Román Acevedo, M. H. Aguirre, C. Ferreyra +6
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrica…
cond-mat.mtrl-sci2016★ 26 cited
Origin of multistate resistive switching in Ti/manganite/Si/Si heterostructures
W. Román Acevedo, C. Acha, M. J. Sánchez +2
We report on the growth and characterization of Ti/Mn/Si/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an…
cond-mat.mtrl-sci2011★ 16 cited
Asymmetric pulsing for reliable operation of titanium/manganite memristors
F. Gomez-Marlasca, N. Ghenzi, P. Stoliar +4
We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm t…