587 citations · 2.3k across the 12 of their papers we have counts for
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Defect engineering of silicon with ion pulses from laser acceleration
Walid Redjem, Ariel J. Amsellem, Frances I. Allen +27
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals wit…
Chemical control of the charge state of nitrogen-vacancy centers in diamond
M. V. Hauf, B. Grotz, B. Naydenov +8
We investigate the effect of surface termination on the charge state of nitrogen vacancy centers, which have been ion-implanted few nanometers below the surface of diamond. We find…
Single photon emitters based on Ni/Si related defects in single crystalline diamond
David Steinmetz, Elke Neu, Jan Meijer +2
We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. Testing different ion dose combinations…
Concept of deterministic single ion doping with sub-nm spatial resolution
J. Meijer, T. Vogel, B. Burchard +9
We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of th…
Generation of single colour centers by focussed nitrogen implantation
J. Meijer, B. Burchard, M. Domhan +5
Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and EPR…