587 citations · 2.3k across the 12 of their papers we have counts for
12 papers
Defect engineering of silicon with ion pulses from laser acceleration
Walid Redjem, Ariel J. Amsellem, Frances I. Allen +27
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals wit…
Stark shift and field ionization of arsenic donors in Si-SOI structures
C. C. Lo, S. Simmons, R. Lo Nardo +8
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic d…
Room temperature entanglement between distant single spins in diamond
Florian Dolde, Ingmar Jakobi, Boris Naydenov +7
Entanglement is the central yet fleeting phenomena of quantum physics. Once being considered a peculiar counter-intuitive property of quantum theory it has developed into the most…
Chemical control of the charge state of nitrogen-vacancy centers in diamond
M. V. Hauf, B. Grotz, B. Naydenov +8
We investigate the effect of surface termination on the charge state of nitrogen vacancy centers, which have been ion-implanted few nanometers below the surface of diamond. We find…
The 198Au beta-half-life in the metal Au revisited
K. Fortak, R. Kunz, L. Gialanella +3
The half-life of the beta-decay of 198Au has been measured for room temperature and 12 K. The resulting values of T(RT) = 2.684 +- 0.004 d and T(12 K) = 2.687 +- 0.005 d agree well…
Single photon emitters based on Ni/Si related defects in single crystalline diamond
David Steinmetz, Elke Neu, Jan Meijer +2
We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. Testing different ion dose combinations…