28 citations · 91 across the 4 of their papers we have counts for
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"Inside Out" Growth Method for High-Quality Nitrogen-Doped Graphene
Sara Fiori, Daniele Perilli, Mirco Panighel +7
High-quality nitrogen-doped graphene on nickel is prepared by exploiting both the catalytic properties of nickel and the solubility of nitrogen atoms into its bulk. Following the s…
Operando atomic-scale study of graphene CVD growth at steps of polycrystalline nickel
Zhiyu Zou, Virginia Carnevali, Laerte L. Patera +5
An operando investigation of graphene growth on (100) grains of polycrystalline nickel (Ni) surfaces was performed by means of variable-temperature scanning tunneling microscopy co…
Interplay among Work Function, electronic structure and stoichiometry in nanostructured vanadium oxides films
Alessandro D'Elia, Cinzia Cepek, Monica de Simone +6
The work function is the parameter of greatest interest in many technological applications involving charge exchange mechanisms at the interface. The possibility to produce samples…
Electronic structure and molecular orientation of a Zn-tetra-phenyl porphyrin multilayer on Si(111)
C. Castellarin Cudia, P. Vilmercati, R. Larciprete +13
The electronic properties and the molecular orientation of Zn-tetraphenyl-porphyrin films deposited on Si(111) have been investigated using synchrotron radiation. For the first tim…
Characterization of high-quality MgB2(0001) epitaxial films on Mg(0001)
Luca Petaccia, Cinzia Cepek, Silvano Lizzit +4
High-grade MgB2(0001) films were grown on Mg(0001) by means of ultra-high-vacuum molecular beam epitaxy. Low energy electron diffraction and x-ray diffraction data indicate that th…