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cond-mat.mtrl-sci2005
Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures
P. Sankowski, P. Kacman, J. Majewski +1
The Landauer-Buettiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance…
cond-mat.mtrl-sci2005
Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode
P. Van Dorpe, W. Van Roy, J. De Boeck +5
The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series…
cond-mat.mtrl-sci2005
Interlayer Exchange Coupling in (Ga,Mn)As-based Superlattices
P. Sankowski, P. Kacman
The interlayer coupling between (Ga,Mn)As ferromagnetic layers in all-semiconductor superlattices is studied theoretically within a tight-binding model, which takes into account th…