280 citations · 320 across the 6 of their papers we have counts for
6 papers
Simultaneous imaging of dopants and free charge carriers by STEM-EELS
Hongbin Yang, Andrea Konečná, Xianghan Xu +4
Doping inhomogeneities in solids are not uncommon, but their microscopic observation and understanding are limited due to the lack of bulk-sensitive experimental techniques with hi…
Electronic structure of Humble defects in Ge and GeSi
Shang Ren, Hongbin Yang, Sobhit Singh +3
The group-IV diamond-structure elements are known to host a variety of planar defects, including {001} planar defects in C and {001}, {111} and {113} planar defects in Si and Ge. A…
Humble planar defects in SiGe nanopillars
Hongbin Yang, Shang Ren, Sobhit Singh +5
We report a new \{001\} planar defect found in SiGe nanopillars. The defect structure, determined by atomic resolution electron microscopy, matches the Humble defect model proposed…
Low-loss tunable infrared plasmons in the high-mobility perovskite (Ba,La)SnO
Hongbin Yang, Andrea Konečná, Xianghan Xu +4
BaSnO exhibits the highest carrier mobility among perovskite oxides, making it ideal for oxide electronics. Collective charge carrier oscillations, plasmons, are expected to ar…
Instability, Intermixing and Electronic Structure at the Epitaxial LaAlO3/SrTiO3(001) Heterojunction
S. A. Chambers, M. H. Engelhard, V. Shutthanandan +11
The question of stability against diffusional mixing at the prototypical LaAlO3/SrTiO3(001) interface is explored using a multi-faceted experimental and theoretical approach. We co…
Control of topography, stress and diffusion at molecule-metal interface
Nikolai B. Zhitenev, Weirong Jiang, Artur Erbe +4
Transport properties of metal-molecule-metal junctions containing monolayer of conjugated and saturated molecules with characteristic dimensions in the range of 30-300 nm are corre…