William A. Callahan

most citedFrom Text to Test: AI-Generated Control Software for Materials Science Instruments

14 citations · 14 across the 3 of their papers we have counts for

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4 papers · 1 filter

cond-mat.mtrl-sci2026

High-Temperature Hydrogen Sensors Based on Gallium Oxide Heterojunction Diodes

William A. Callahan, Kingsley Egbo, Anna Sacchi +5

Long-term, high temperature operation of Ga2O3 devices is a crucial hurdle that must be overcome before widespread adoption of the technology can be achieved, but is largely absent…

cond-mat.mtrl-sci2024★ 14 cited

From Text to Test: AI-Generated Control Software for Materials Science Instruments

Davi M Fébba, Kingsley Egbo, William A. Callahan +1

Large language models (LLMs) are transforming the landscape of chemistry and materials science. Recent examples of LLM-accelerated experimental research include virtual assistants…

cond-mat.mtrl-sci2024

Reliable operation of Cr $_{2}$ O $_{3}$ :Mg/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes at 600 $^{\circ}$ C

William A. Callahan, Kingsley Egbo, Cheng-Wei Lee +3

$β$ -Ga $_{2}$ O $_{3}$ -based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applicatio…

cond-mat.mtrl-sci2024

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature

Kingsley Egbo, Emily M. Garrity, William A. Callahan +6

NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…

High-Temperature Hydrogen Sensors Based on Gallium Oxide Heterojunction Diodes

From Text to Test: AI-Generated Control Software for Materials Science Instruments

Reliable operation of Cr2​O3​:Mg/ β-Ga2​O3​ p-n heterojunction diodes at 600∘C

NiGa2​O4​ interfacial layers in NiO/Ga2​O3​ heterojunction diodes at high temperature

Reliable operation of Cr $_{2}$ O $_{3}$ :Mg/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes at 600 $^{\circ}$ C

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature