44 citations · 94 across the 5 of their papers we have counts for
5 papers
Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing
Salvatore Sanzaro, Corrado Bongiorno, Paolo Badalà +5
We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive…
Simulation of the growth kinetics in group IV compound semiconductors
A. La Magna, A. Alberti, E. Barbagiovanni +5
We present a stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3-type bonding symmetry. Formalization a…
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
P. Fiorenza, M. Vivona, S. Di Franco +5
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations.…
Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC
S. Rascunà, P. Badalà, C. Tringali +8
This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm t…
Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon
Alessandra Alberti, Corrado Bongiorno, Brunella Cafra +6
In a system consisting of two different lattices, the structural stability is ensured when an epitaxial relationship occurs between them and allows the system to retain the stress,…