409 citations · 546 across the 9 of their papers we have counts for
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Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy
Muthusamy Omprakash, Saurabh Singh, Keisuke Hirata +7
For simultaneously achieving the high-power factor and low lattice thermal conductivity of Si-Ge based thermoelectric materials, we employed, in this study, constructively modifyin…
First-principles calculations of thermal electron emission from H in silicon
Yoshiyuki Yamamoto, Alpin Novianus Tatan, Osamu Sugino
Thermal electron emission process of a hydrogen impurity is an important topic of fundamental semiconductor physics. Despite of decades-long study, theory is not established yet. H…
Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6
Swapnil Ghodke, Omprakash Muthusamy, Kevin Delime Codrin +9
The efficiency of energy conversion in thermoelectric generators (TEGs) is directly proportional to electrical conductivity and Seebeck coefficient while inversely to thermal condu…
Iterative diagonalization of the non-Hermitian transcorrelated Hamiltonian using a plane-wave basis set: Application to -electron systems with deep core states
Masayuki Ochi, Yoshiyuki Yamamoto, Ryotaro Arita +1
We develop an iterative diagonalization scheme in solving a one-body self-consistent-field equation in the transcorrelated (TC) method using a plane-wave basis set. Non-Hermiticity…
A possible model to high TC ferromagnetism in Gallium Manganese Nitrides based on resonation properties of impurities in semiconductors
H. Hori, Y. Yamamoto, S. Sonoda
The high TC ferromagnetism in (Ga,Mn)N were observed and almost all results are approximately similar to the experimental results in (Ga,Mn)As except the value of TC. Though all st…
Intrinsic mechanism for high temperature ferromagnetism in GaMnN
Saki Sonoda, Isao Tanaka, Hidekazu Ikeno +9
Considerable efforts have been devoted recently to synthesize diluted magnetic semiconductors having ferromagnetic properties at room temperature because of their technological imp…
Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE
Saki Sonoda, Hidenobu Hori, Yoshiyuki Yamamoto +5
Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and wit…
High TC ferromagnetism in diluted magnetic semiconducting GaN:Mn films
H. Hori, S. Sonoda, T. Sasaki +4
Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 9…
Molecular Beam Epitaxy of Wurtzite (Ga,Mn)N Films on Sapphire(0001) Showing the Ferromagnetic Behaviour at Room Temperature
S. Sonoda, S. Shimizu, T. Sasaki +2
Wurtzite (Ga,Mn)N films showing ferromagnetic behaviour at room temperature were successfully grown on sapphire(0001) substrates by molecular beam epitaxy using ammonia as nitrogen…