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cond-mat.mtrl-sci2024★ 2 cited
Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN
Pietro Pampili, Vitaly Z. Zubialevich, Peter J. Parbrook
In this study we report on a novel two-step epitaxial growth technique that enables a significant improvement of the crystal quality of nitrogen-polar GaN. The starting material is…
cond-mat.mtrl-sci2006★ 30 cited
The origin of the red luminescence in Mg-doped GaN
S. Zeng, G. N. Aliev, J. J. Davies +6
Optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been employed to study magnesium-doped GaN layers grown by metal-organic…