3 papers
physics.optics2025
High Uniformity GaN Micro-pyramids and Platelets by Selective Area Growth
Changhao Li, Vitaly Z. Zubialevich, Peter J. Parbrook +2
The development of uniform GaN micro-pyramids and platelets via selective area growth is a critical step toward advancing III-nitride device technologies, particularly for micro-li…
cond-mat.mtrl-sci2025
Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential
Badal Mondal, Pietro Pampili, Jayjit Mukherjee +3
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For…
physics.app-ph2025
Temperature-dependent investigation of polarisation doping in 330 nm ultraviolet light-emitting diodes
Peter Milner, Vitaly Z. Zubialevich, Sandeep M. Singh +3
Polarisation doping of AlGaN, through grading of , has realised major improvements in -type conductivity in ultraviolet (UV) light-emitting diodes (LEDs) compared…