2 citations · 2 across the 4 of their papers we have counts for
4 papers
Barrier-channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures
Pietro Pampili, Vitaly Z. Zubialevich, Badal Mondal +4
In this work, we report on recent results in understanding and addressing the issue of interface smearing in high-aluminium content AlGaN/AlGaN heterostructures. On the one hand, t…
High Uniformity GaN Micro-pyramids and Platelets by Selective Area Growth
Changhao Li, Vitaly Z. Zubialevich, Peter J. Parbrook +2
The development of uniform GaN micro-pyramids and platelets via selective area growth is a critical step toward advancing III-nitride device technologies, particularly for micro-li…
Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential
Badal Mondal, Pietro Pampili, Jayjit Mukherjee +3
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For…
Temperature-dependent investigation of polarisation doping in 330 nm ultraviolet light-emitting diodes
Peter Milner, Vitaly Z. Zubialevich, Sandeep M. Singh +3
Polarisation doping of AlGaN, through grading of , has realised major improvements in -type conductivity in ultraviolet (UV) light-emitting diodes (LEDs) compared…