101 citations · 116 across the 4 of their papers we have counts for
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Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…
Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of FeN Nanocrystals Embedded in GaN
A. Navarro-Quezada, K. Gas, T. Truglas +7
Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering…
Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy
Suzanne Lancaster, Heiko Groiss, Tobias Zederbauer +5
The addition of boron to GaAs nanowires grown by self-catalyzed molecular beam epitaxy was found to have a strong effect on the nanowire morphology, with axial growth greatly reduc…
Large magnetic gap at the Dirac point in a Mn-induced BiTe heterostructure
E. D. L. Rienks, S. Wimmer, P. S. Mandal +15
Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge…
Centrosymmetric PbTe/CdTe quantum dots coherently embedded by epitaxial precipitation
W. Heiss, H. Groiss, E. Kaufmann +7
A concept for the fabrication of highly symmetric quantum dots that are coherently embedded in a single crystalline matrix is demonstrated. In this approach, the formation of the q…