124 citations · 124 across the 3 of their papers we have counts for
4 papers · 1 filter
Enabling the Ambient Pressure Growth of ScB2 Crystals for AlGaN Power Electronics
Satya K. Kushwaha, Ahamed Raihan, Astrid D. Kengne +19
Here we report the growth of single crystalline ScB2, an ultrahigh-temperature ceramic, at ambient pressure in a laser-heated Optical Floating Zone via the travelling solvent metho…
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan +22
We report the properties of hexagonal (space group P6/mmm) scandium diboride () single crystals grown by a laser diode floating zone method at growth rates of ~1mm/…
Crystal growth and characterization of the ultra-high temperature substrate
Evan N. Crites, Sharad Mahatara, Joshua R. Hummel +12
Incorporation of (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approache…
Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity
Shriram Shivaraman, M. V. S. Chandrashekhar, John J. Boeckl +1
A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simu…