Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity

Abstract

A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder using the spectra. The attenuation of the substrate Raman signal due to the graphene overlayer is found to be dependent on the graphene film thickness deduced from X-ray photoelectron spectroscopy and transmission electron microscopy of the surfaces. We explain this dependence using an absorbing overlayer model. This method can be used for mapping graphene thickness over a region and is capable of estimating thickness of multilayer graphene films beyond that possible by XPS and Auger electron spectroscopy (AES).

arXiv comment14 pages, 9 figures

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Cited by in corpus (11)

• Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
• Reliably Counting Atomic Planes of Few-Layer Graphene (n>4)
• Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC
• Graphene formed on SiC under various environments: Comparison of Si-face and C-face
• Direct observation of room temperature high-energy resonant excitonic effects in graphene
• Multi-carrier Transport in Epitaxial Multi-layer Graphene
• Effect of residual gas composition on epitaxial graphene growth on SiC
• A method to extract pure Raman spectrum of epitaxial graphene on SiC
• Ripple morphology of graphitic surfaces: a comparison between few-layer graphene and HOPG
• Thermal decomposition and chemical vapor deposition: a comparative study of multi-layer growth of graphene on SiC(000-1)
• Suppression of nucleation density in twisted graphene domains grown on graphene/SiC template by sequential thermal process