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cond-mat.mtrl-sci2026
Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO/4H-SiC Interface
Takahiro Ono, Mizuki Ohashi, Tomohiro Shigeno +4
Fast-responding trap states introduced by NO-annealing are suspected to limit the channel mobility of 4H-SiC MOSFETs, yet their microscopic characterization remains challenging bec…
cond-mat.mtrl-sci2024
Atomic observation on diamond (001) surfaces with non-contact atomic force microscopy
Runnan Zhang, Yuuki Yasui, Masahiro Fukuda +5
To achieve atomic-level characterization of the diamond (001) surface, persistent efforts have been made over the past few decades. The motivation behind the pursuit extends beyond…