3 citations · 3 across the 1 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2026
Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO/4H-SiC Interface
Takahiro Ono, Mizuki Ohashi, Tomohiro Shigeno +4
Fast-responding trap states introduced by NO-annealing are suspected to limit the channel mobility of 4H-SiC MOSFETs, yet their microscopic characterization remains challenging bec…
physics.app-ph2025
Force-Based Reading and Writing of Individual Single-Atom Magnets
Yuuki Adachi, Kazuki Ueda, Yuuki Yasui +1
The integration of single-atom bits enables the realization of the highest data-density memory. Reading and writing information to these bits through mechanical interactions opens…
cond-mat.str-el2024★ 3 cited
Closing of the Mott gap near step edges in NiS2
Yuuki Yasui, Kota Iwata, Shota Okazaki +5
A prototypical charge-transfer type Mott insulator NiS2 pyrite exhibits a metal-insulator transition with bandwidth control. Recent discoveries on surface-specific electronic state…