3 citations · 3 across the 4 of their papers we have counts for
4 papers
Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO/4H-SiC Interface
Takahiro Ono, Mizuki Ohashi, Tomohiro Shigeno +4
Fast-responding trap states introduced by NO-annealing are suspected to limit the channel mobility of 4H-SiC MOSFETs, yet their microscopic characterization remains challenging bec…
Force-Based Reading and Writing of Individual Single-Atom Magnets
Yuuki Adachi, Kazuki Ueda, Yuuki Yasui +1
The integration of single-atom bits enables the realization of the highest data-density memory. Reading and writing information to these bits through mechanical interactions opens…
Closing of the Mott gap near step edges in NiS2
Yuuki Yasui, Kota Iwata, Shota Okazaki +5
A prototypical charge-transfer type Mott insulator NiS2 pyrite exhibits a metal-insulator transition with bandwidth control. Recent discoveries on surface-specific electronic state…
Atomic observation on diamond (001) surfaces with non-contact atomic force microscopy
Runnan Zhang, Yuuki Yasui, Masahiro Fukuda +5
To achieve atomic-level characterization of the diamond (001) surface, persistent efforts have been made over the past few decades. The motivation behind the pursuit extends beyond…