93 citations · 127 across the 6 of their papers we have counts for
6 papers
Element-Specific Depth Profile of Magnetism and Stoichiometry at the La0.67Sr0.33MnO3/BiFeO3 Interface
J. Bertinshaw, S. Brück, D. Lott +14
Depth-sensitive magnetic, structural and chemical characterization is important in the understanding and optimization of novel physical phenomena emerging at interfaces of transiti…
A method for assigning satellite lines to crystallographic sites in rare earth crystals
Rose L. Ahlefeldt, Neil B. Manson, Wayne D. Hutchison +1
We describe an experimental technique for associating the satellite lines in a rare earth optical spectrum caused by a defect with the rare earth ions in crystal sites around that…
Proceedings of the 35th Annual Australian/New Zealand Condensed Matter and Materials Meeting
K. Radhanpura, S. Hargreaves, R. A. Lewis +42
The 35th Australian/New Zealand Annual Condensed Matter and Materials Meeting was held at the Charles Sturt University campus in Wagga Wagga, NSW, Australia from the 1st to the 4th…
Electrically Detected Magnetic Resonance Applied to the Study of Near Surface Electron Donors in Silicon
W. D. Hutchison, P. G. Spizzirri, F. Hoehne +1
Electrically detected magnetic resonance (EDMR) is applied to mm size devices with implanted leads and a 50 micron square gap laid down on bulk phosphorus doped silicon. Devices wi…
ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface
Paul G. Spizzirri, Wayne D. Hutchison, Nikolas Stavrias +4
This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity…
Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
D. R. McCamey, H. Huebl, M. S. Brandt +4
We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist…