14 citations · 14 across the 3 of their papers we have counts for
6 papers
Quartet state of the neutral nitrogen-vacancy center in diamond and optimized spin readout under near-infrared two-photon excitation
Nikoletta Jegenyes, Pál Maák, Vladimir Verkhovlyuk +4
Photoionization of the excited nitrogen-vacancy center (NV-) in diamond leaves the neutral defect in a metastable quartet state of unknown energy. Using two-photon optically detect…
Mn--Cr dopant association in dilute co-doped revealed by combined EPR and optical spectroscopy
Apoko S. Omondi, Mátyás M. Rudolf, Nikoletta Jegenyés +5
Efficient and durable phosphors made from abundant elements underpin energy-saving solid-state lighting, near-infrared light sources for sensing, and X-ray and biomedical imaging.…
Precursor stoichiometry controls dopant structure, defect chemistry, and valence in Mn-doped ZnGaO nanocrystals
Mátyás M. Rudolf, Gábor Bortel, Nikoletta Jegenyés +5
The luminescence of doped nanocrystals is usually optimised through the activator; here we show that the host cation ratio is an equally decisive, and largely overlooked, design va…
Solution-phase fluorination of nanodiamond: near-surface NV activation and spin relaxation
Szabolcs Czene, Olga Krafcsik, Nikoletta Jegenyés +4
Nanodiamonds hosting luminescent point defects, known as fluorescent nanodiamonds (FND), are a leading platform for quantum technology. The nitrogen-vacancy (NV) centre is the most…
Materials and Spin Characteristics of Nanodiamonds Partially Covered with Amino Groups and Embedded with Nitrogen-Vacancy Color Centers
Nikoletta Jegenyes, Vladimir Verkhovlyuk, Szabolcs Czene +5
Fluorescent nanodiamonds (FNDs) with optically read qubits hold great potential for detecting electric and magnetic fields, temperature, and other nanoscale physicochemical quantit…
Geometric and chemical components of the giant piezoresistance in silicon nanowires
M. McClarty, N. Jegenyes, M. Gaudet +5
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (…