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cond-mat.mtrl-sci2026
Anisotropic Dopant and Strain Architectures in WS Nanocrystals Driven by Growth Kinetics
Frederico B. Sousa, Raphaela de Oliveira, Matheus J. S. Matos +11
Dopant distribution in two-dimensional semiconductors is typically assumed to be stochastic, limiting deterministic defect engineering. Here, we show that non-equilibrium growth ki…
cond-mat.mtrl-sci2025
A Universal Raman Spectroscopic Framework for Defect Quantification in Mono-to-Multilayer Graphenic Materials: The Graphene Atlas
Kazunori Fujisawa, Bruno R. Carvalho, Pedro Venezuela +4
Point defects, though atomically small, significantly influence the properties of 2D materials. A general method for characterizing point defect density () in graphenic ma…