4 papers
Anisotropic Dopant and Strain Architectures in WS Nanocrystals Driven by Growth Kinetics
Frederico B. Sousa, Raphaela de Oliveira, Matheus J. S. Matos +11
Dopant distribution in two-dimensional semiconductors is typically assumed to be stochastic, limiting deterministic defect engineering. Here, we show that non-equilibrium growth ki…
Nonselective generalized measurements as a resource for quantum thermal machines in a double quantum dot
Bruno Carvalho, Jonas F. G. Santos, Moises Rojas
We investigated quantum thermal machines powered by sequential nonselective generalized measurements, taking a double quantum dot with coherent interdot tunneling as a working subs…
Resonance-Enhanced Four-Wave Mixing Imaging for Mapping Defect Regions in Vanadium-Doped WS2 Monolayers
Felipe Menescal, Frederico B. Sousa Mingzu Liu, Ana P. M. Barboza +8
Defect engineering is crucial for tuning 2D transition metal dichalcogenide properties for quantum and optoelectronic applications. While conventional photoluminescence (PL) and Ra…
A Universal Raman Spectroscopic Framework for Defect Quantification in Mono-to-Multilayer Graphenic Materials: The Graphene Atlas
Kazunori Fujisawa, Bruno R. Carvalho, Pedro Venezuela +4
Point defects, though atomically small, significantly influence the properties of 2D materials. A general method for characterizing point defect density () in graphenic ma…