264 citations · 267 across the 3 of their papers we have counts for
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cond-mat.mes-hall2010
Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Giuseppe Carlo Tettamanzi, Abhijeet Paul, Sunhee Lee +5
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence o…
cond-mat.mes-hall2006★ 264 cited
Transport spectroscopy of a single dopant in a gated silicon nanowire
H. Sellier, G. P. Lansbergen, J. Caro +5
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic sta…