264 citations · 333 across the 6 of their papers we have counts for
6 papers
Parasitic Bipolar Leakage in III-V FETs: Impact of Substrate Architecture
Borna Obradovic, Titash Rakshit, Wei-E Wang +4
InGaAs-based Gate-all-Around (GAA) FETs with moderate to high In content are shown experimentally and theoretically to be unsuitable for low-leakage advanced CMOS nodes. The primar…
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
R. Rahman, G. P. Lansbergen, J. Verduijn +7
We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experim…
Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Giuseppe Carlo Tettamanzi, Abhijeet Paul, Sunhee Lee +5
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence o…
Lifetime enhanced transport in silicon due to spin and valley blockade
G. P. Lansbergen, R. Rahman, J. Verduijn +6
We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silico…
Thermionic Emission as a tool to study transport in undoped nFinFETs
Giuseppe C. Tettamanzi, Abhijeet Paul, Gabriel P. Lansbergen +6
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the ch…
Transport spectroscopy of a single dopant in a gated silicon nanowire
H. Sellier, G. P. Lansbergen, J. Caro +5
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic sta…