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Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates
G. Fábián, P. Makk, M. H. Madsen +3
We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be elect…
Non-collinear spin-orbit magnetic fields in a carbon nanotube double quantum dot
Morten Canth Hels, Bernd Braunecker, Kasper Grove-Rasmussen +1
We demonstrate experimentally that non-collinear intrinsic spin-orbit magnetic fields can be realized in a curved carbon nanotube two-segment device. Each segment, analyzed in the…
Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation
R. Tanta, M. H. Madsen, Z. Liao +4
The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This a…
Electrical tuning of Rashba spin-orbit interaction in multigated InAs nanowires
Zoltán Scherübl, Gergő Fülöp, Morten Hannibal Madsen +2
Indium arsenide (InAs) nanowires (NWs) are a promising platform to fabricate quantum electronic devices, among others they have strong spin-orbit interaction (SOI). The controlled…
Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts
G. Fülöp, S. d'Hollosy, L. Hofstetter +4
Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic de…
InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers
M. Taupin, E. Mannila, P. Krogstrup +6
We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard…