D. Rideau

activity

20002016

most citedModel for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

179 citations · 293 across the 6 of their papers we have counts for

collaborators

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3 papers · 1 filter

cond-mat.mtrl-sci2015★ 3 cited

Remote Surface Roughness Scattering in FDSOI devices with high- $κ$ /SiO $_{2}$ gate stacks

Y. M. Niquet, I. Duchemin, V. -H. Nguyen +2

We investigate remote surface scattering (RSR) by the SiO $_{2}$ /HfO $_{2}$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We s…

cond-mat.mtrl-sci2009★ 179 cited

Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

Y. M. Niquet, D. Rideau, C. Tavernier +2

We discuss a model for the on-site matrix elements of the sp3d5s* tight-binding hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model features on-si…

cond-mat.mtrl-sci2006★ 2 cited

Strained Si, Ge and SiGe alloys modeling with full-zone k.p method optimized from first principle calculation

D. Rideau, M. Feraille, L. Ciampolini +4

The electronic energy band structure of strained and unstrained Si, Ge and SiGe alloys is examined in this work using thirty-level k.p analysis. The energy bands are at first obtai…

Remote Surface Roughness Scattering in FDSOI devices with high-κ/SiO2​ gate stacks

Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

Strained Si, Ge and SiGe alloys modeling with full-zone k.p method optimized from first principle calculation

Remote Surface Roughness Scattering in FDSOI devices with high- $κ$ /SiO $_{2}$ gate stacks