22 citations · 40 across the 4 of their papers we have counts for
3 papers · 1 filter
Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts
G. Scappucci, L. Di Gaspare, E. Giovine +3
We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK…
Conductance quantization in etched Si/SiGe quantum point contacts
G. Scappucci, L. Di Gaspare, E. Giovine +3
We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately…
Low field magnetotransport in strained Si/SiGe cavities
G. Scappucci, L. Di Gaspare, F. Evangelisti +6
Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a…