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cond-mat.mes-hall2006
Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts
G. Scappucci, L. Di Gaspare, E. Giovine +3
We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK…
cond-mat.mes-hall2005
Conductance quantization in etched Si/SiGe quantum point contacts
G. Scappucci, L. Di Gaspare, E. Giovine +3
We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately…
cond-mat.mes-hall2004
Low field magnetotransport in strained Si/SiGe cavities
G. Scappucci, L. Di Gaspare, F. Evangelisti +6
Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a…