activity
20042019
most citedEarly stage of CVD graphene synthesis on Ge(001) substrate

29 citations · 111 across the 7 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall2019★ 28 cited

Driving with temperature the synthesis of graphene films on Ge(110)

L. Persichetti, M. De Seta, A. M. Scaparro +8

We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spec…

cond-mat.mes-hall2018★ 13 cited

Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells

M. Montanari, M. Virgilio, C. L. Manganelli +11

In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates…

cond-mat.mes-hall2006

Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts

G. Scappucci, L. Di Gaspare, E. Giovine +3

We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK…

cond-mat.mes-hall2005★ 22 cited

Conductance quantization in etched Si/SiGe quantum point contacts

G. Scappucci, L. Di Gaspare, E. Giovine +3

We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately…

cond-mat.mes-hall2004★ 6 cited

Low field magnetotransport in strained Si/SiGe cavities

G. Scappucci, L. Di Gaspare, F. Evangelisti +6

Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a…