activity
20052022
most citedLarge magnetic gap at the Dirac point in a Mn-induced BiTe heterostructure

278 citations · 1.4k across the 30 of their papers we have counts for

collaborators

28 papers

cond-mat.mtrl-sci2022★ 1 cited

Dependence of the electronic structure of -SiAlON on the (Al,O) concentration and on the temperature

Saleem Ayaz Khan, Ondřej Šipr, Jiří Vackář +1

SiAlON is a prominent example of systems suitable as hosts for creating materials for light-emitting diodes (LEDs). In this work, the electronic structure of a series of semiordere…

cond-mat.mtrl-sci2022★ 14 cited

Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric -GeTe(111)

Geoffroy Kremer, Julian Maklar, Laurent Nicolaï +11

Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, -GeTe(111) is a non-centrosymmetric ferroelectr…

cond-mat.mtrl-sci2022★ 8 cited

Electric field control of magnons in magnetic thin films: ab initio predictions for 2D metallic heterostructures

Alberto Marmodoro, Sergiy Mankovsky, Hubert Ebert +2

We explore possibilities for control of magnons in two-dimensional heterostructures by an external electric field acting across a dielectric barrier. By performing ab-initio calcul…

cond-mat.mtrl-sci2019★ 17 cited

Surface resonance of the Heusler half metal Co2MnSi probed by SX-ARPES

Christian Lidig, Jan Minár, Jürgen Braun +6

Heusler compounds are promising materials for spintronics with adjustable electronic properties including 100% spin polarization at the Fermi energy. We investigate the electronic…

cond-mat.mtrl-sci2018★ 278 cited

Large magnetic gap at the Dirac point in a Mn-induced BiTe heterostructure

E. D. L. Rienks, S. Wimmer, P. S. Mandal +15

Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge…

cond-mat.mtrl-sci2018

Bi monocrystal formation on InAs(111)A and B substrates

L. Nicolaï, J. -M. Mariot, U. Djukic +13

The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spect…