Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields

A. Hernández-Mínguez, A. V. Poshakinskiy, M. Hollenbach +2

The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy (${\mathrm{V}}_{\mathrm{Si}}$) in silicon carbide makes it a promising system for applicatio…