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cond-mat.mes-hall2005
Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs
Enrico Prati, Marco Fanciulli, Giorgio Ferrari +1
We report on the static magnetic field dependence of the random telegraph signal (RTS) in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense…
q-bio.QM2005
Modelization of Thermal Fluctuations in G Protein-Coupled Receptors
C. Pennetta, V. Akimov, E. Alfinito +5
We simulate the electrical properties of a device realized by a G protein coupled receptor (GPCR), embedded in its membrane and in contact with two metallic electrodes through whic…