17 citations · 23 across the 4 of their papers we have counts for
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Unlocking extreme doping and strain in epitaxial monocrystalline silicon
Léonard Desvignes, Dominique Débarre, Ludovic Largeau +8
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' p…
Evidence of boron pairs in highly boron laser doped silicon
Léonard Desvignes, Francesca Chiodi, Géraldine Hallais +5
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was ma…
Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing
Toshiyuki Tabata, Karim, Huet +5
Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity i…