41 citations · 141 across the 11 of their papers we have counts for
6 papers · 1 filter
Electronic structure of the Ge/Si(105) hetero-interface
Polina M. Sheverdyaeva, Conor Hogan, Anna Sgarlata +5
Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/…
Formation of extended thermal etch pits on annealed Ge wafers
L. Persichetti, M. Fanfoni, M. De Seta +4
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 °C. This temperature range is relevant in many surface-prep…
Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws
M. Tomellini, M. Fanfoni
The theory of Kolmogorov-Johnson-Mehl-Avrami (KJMA) for phase transition kinetics is subjected to severe limitations concerning the functional form of the growth law. This paper is…
Experimental corroboration of the Mulheran-Blackman explanation of the scale invariance in thin film growth: the case of InAs quantum dots on GaAs(001)
M. Fanfoni, E. Placidi, F. Arciprete +3
Mulheran and Blackman have provided a simple and clear explanation of the scale invariance of the island size distribution at the early stage of film growth [Phil. Mag. Lett. 72, 5…
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001)
F. Arciprete, E. Placidi, V. Sessi +3
The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensi…
Eliminating overgrowth effects in Poisson spatial process through the correlation among actual nuclei
M. Tomellini, M. Fanfoni
It has been shown that the KJMA (Kolmogorov-Johnson-Mehl-Avrami) solution of phase transition kinetics can be set as a problem of correlated nucleation [Phys.Rev.B65, 172301 (2002)…