41 citations · 141 across the 11 of their papers we have counts for
11 papers
Electronic structure of the Ge/Si(105) hetero-interface
Polina M. Sheverdyaeva, Conor Hogan, Anna Sgarlata +5
Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/…
Connection between Phantom and Spatial Correlation in the Kolmogorov-Johnson-Mehl-Avrami-model: A brief review
Massimo Tomellini, Massimo Fanfoni
The goal of this minireview is restricted to describe how the Kolmogorov-Johnson-Mehl-Avrami model has evolved from its birth up to the present day. The model, which dates back to…
Driving with temperature the synthesis of graphene films on Ge(110)
L. Persichetti, M. De Seta, A. M. Scaparro +8
We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spec…
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing
L. Persichetti, M. Fanfoni, B. Bonanni +5
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(0…
Formation of extended thermal etch pits on annealed Ge wafers
L. Persichetti, M. Fanfoni, M. De Seta +4
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 °C. This temperature range is relevant in many surface-prep…
Statistical approach based on 1D Voronoi tessellation as a tool for studying the randomness of fractional digits of some irrational numbers
M. Fanfoni, M. Tomellini
An "experimental" study on the randomness of the fractional digits of , and irrational numbers are presented. This is done by exploiting the Poisson-Voronoi tessell…