131 citations · 612 across the 16 of their papers we have counts for
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Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity
Sergio Fernández-Garrido, Xiang Kong, Tobias Gotschke +4
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced b…
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
S. Fernández-Garrido, A. Redondo-Cubero, R. Gago +7
Indium incorporation into wurtzite (0001)-oriented InAlGaN layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temp…
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Sergio Fernández-Garrido, Manfred Ramsteiner, Guanhui Gao +10
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we e…
Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
Johannes K. Zettler, Pierre Corfdir, Christian Hauswald +10
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly…
Polarity-induced selective area epitaxy of GaN nanowires
Ziani de Souza Schiaber, Gabriele Calabrese, Xiang Kong +6
We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assis…