309 citations · 1.2k across the 13 of their papers we have counts for
7 papers · 1 filter
Charged domain walls and crystallographic microstructures in hybrid improper ferroelectric CaSrTiO
Hiroshi Nakajima, Koji Shigematsu, Yoichi Horibe +2
The charged domain walls in ferroelectric materials exhibit intriguing physical properties. We examine herein the charged-domain-wall structures in CaSrTiO usin…
Color theorems, chiral domain topology and magnetic properties of FexTaS2
Yoichi Horibe, Junjie Yang, Yong-Heum Cho +8
Common mathematical theory can have profound applications in understanding real materials. The intrinsic connection between aperiodic orders observed in the Fibonacci sequence, Pen…
Transferring MBE-grown topological insulator films to arbitrary substrates and Metal-insulator transition via Dirac gap
Namrata Bansal, Myung Rae Cho, Matthew Brahlek +6
Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-si…
Is hexagonal InMnO3 ferroelectric?
F. -T. Huang, X. Wang, Y. S. Oh +4
The presence of ferroelectricity in hexagonal (h-)InMnO3 has been highly under debate. The results of our comprehensive experiments of low-temperature (T) polarization, TEM and HAA…
Direct observation of the proliferation of ferroelectric loop domains and vortex-antivortex pairs
S. C. Chae, N. Lee, Y. Horibe +5
We discovered "stripe" patterns of trimerization-ferroelectric domains in hexagonal REMnO3 (RE=Ho, ---, Lu) crystals (grown below ferroelectric transition temperatures (Tc), reachi…
Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3
Yong Seung Kim, Matthew Brahlek, Namrata Bansal +7
We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170…
Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
Namrata Bansal, Yong Seung Kim, Eliav Edrey +10
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve inter…